This is a list of semiconductor fabrication plants, factories where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries that manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.
Glossary of terms
- Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
- Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
- Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
- Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
- Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.
Open plants
Operating fabs include foundries from TSMC, GlobalFoundries, Silex Microsystems, Tower Semiconductor, Advanced Micro Foundry, VTT, SilTerra and IHP Microelectronics amongst others.
| Company | Plant name | Plant location | Plant cost (in US$ billions) | Started production | Wafer size (mm) | Process technology node (nm) | Production capacity (Wafers/Month) | Technology / products | |
|---|---|---|---|---|---|---|---|---|---|
| STMicroelectronics | France, Crolles | 2003 | 200, 300 | 28, 55, 65 | Foundry, SiGe BiCMOS, FD-SOI | ||||
| STMicroelectronics | AG200, AG300 | Italy, Agrate Brianza | 200, 300 | Foundry, MEMS | |||||
| nLIGHT | United States, Washington, Vancouver | 2001 | Laser diodes | ||||||
| Safran Sensing Technologies Switzerland (formerly Colibrys) | Switzerland, Yverdon-les-Bains | 150 | Foundry, MEMS | ||||||
| Pure Wafer | United States, Prescott AZ | Foundry | |||||||
| EM Microelectronic | Switzerland, La Tène, Neuchâtel | 1975 | 180 | Foundry, microcontrollers, ASIC, RFID, smart cards | |||||
| UMC – He Jian | Fab 8N | China, Suzhou | 0.750, 1.2, +0.5 | 2003, May | 200 | 4000–1000, 500, 350, 250, 180, 110 | 77,000 | Foundry | |
| UMC | Fab 6A | Taiwan, Hsinchu | 0.35 | 1989 | 150 | 450 | 31,000 | Foundry | |
| UMC | Fab 8AB | Taiwan, Hsinchu | 1 | 1995 | 200 | 250 | 67,000 | Foundry | |
| UMC | Fab 8C | Taiwan, Hsinchu | 1 | 1998 | 200 | 350–110 | 37,000 | Foundry | |
| UMC | Fab 8D | Taiwan, Hsinchu | 1.5 | 2000 | 200 | 90 | 31,000 | Foundry | |
| UMC | Fab 8E | Taiwan, Hsinchu | 0.96 | 1998 | 200 | 180 | 37,000 | Foundry | |
| UMC | Fab 8F | Taiwan, Hsinchu | 1.5 | 2000 | 200 | 150 | 40,000 | Foundry | |
| UMC | Fab 8S | Taiwan, Hsinchu | 0.8 | 2004 | 200 | 350–250 | 31,000 | Foundry | |
| UMC | Fab 12A | Taiwan, Tainan | 4.65, 4.1, 6.6, 7.3 | 2001, 2010, 2014, 2017 | 300 | 28, 14 | 87,000 | Foundry | |
| UMC | Fab 12i | Singapore | 3.7 | 2004 | 300 | 130–40 | 53,000 | Foundry | |
| UMC – United Semiconductor | Fab 12X | China, Xiamen | 6.2 | 2016 | 300 | 55–28 | 19,000-25,000 (2021) | Foundry | |
| UMC – USJC (formerly MIFS) (formerly Fujitsu) | Fab 12M (original Fujitsu installations) | Japan, Mie Prefecture | 1974 | 150, 200, 300 | 90–40 | 33,000 | Foundry | ||
| Texas Instruments | Miho | Japan, Ibaraki, Miho | 200 | 350, 250 | 40,000 | Analog, DLP | |||
| Texas Instruments (formerly Spansion) | Aizu | Japan, Fukushima, Aizuwakamatsu | 200 | Analog | |||||
| Texas Instruments (formerly National Semiconductor) | MFAB | United States, Maine, South Portland | 0.932 | 1997 | 200 | 350, 250, 180 | Analog | ||
| Texas Instruments (formerly Micron) (formerly IM Flash) | LFAB | United States, Utah, Lehi | 1.3 (+ 3–4, future) | 300 | 65–45 | 70,000 | Analog, mixed signal, logic NAND FLASH (former), 3D XPoint (former) | ||
| Texas Instruments | RFAB1 | United States, Texas, Richardson | 2009 | 300 | 250, 180 | 20,000 | Analog | ||
| Texas Instruments | RFAB2 | United States, Texas, Richardson | 2022 | 300 | Analog | ||||
| Texas Instruments | DMOS5 | United States, Texas, Dallas | 1984 | 200 | 250, 180 | Analog, DLP | |||
| Texas Instruments | DMOS6 | United States, Texas, Dallas | 2000 | 300 | 130–45 | 22,000 | Logic, Analog | ||
| Texas Instruments | DFAB | United States, Texas, Dallas | 1966 | 150, 200 | Mixed Signal, Analog | ||||
| Texas Instruments | SFAB | United States, Texas, Sherman | 1965 | 150 | Analog | ||||
| Texas Instruments | FFAB | Germany, Bavaria, Freising | 200 | 1000, 180 | 37,500 (450,000 per year) | Analog | |||
| Texas Instruments (formerly SMIC – Cension) | CFAB | China, Chengdu | 200 | 30,000 | Analog | ||||
| Tsinghua Unigroup | China, Nanjing | 10 (first phase), 30 | Planned | 300 | 100,000 (first phase) | 3D NAND | |||
| Tsinghua Unigroup – XMC (formerly Xinxin) | Fab 1 | China, Wuhan | 1.9 | 2008 | 300 | 90, 65, 60, 50, 45, 40, 32 | 30,000 | Foundry, NOR | |
| Tsinghua Unigroup – Yangtze Memory Technologies (YMTC) – XMC (formerly Xinxin) | Fab 2 | China, Wuhan | 24 | 2018 | 300 | 20 | 200,000 | 3D NAND | |
| ChangXin Memory – (formerly Innotron Memory) | Fab 1 | China, Hefei | 8 | 2019 | 300 | 19 | 20,000–40,000 | DRAM | |
| SMIC | S1 Mega Fab (S1A/S1B/S1C) | China, Shanghai | 200 | 350–90 | 115,000 | Foundry | |||
| SMIC | S2 (Fab 8) | China, Shanghai | 300 | 45/40–32/28 | 20,000 | Foundry | |||
| SMIC – SMSC | SN1 | China, Shanghai | 10 | 2020 | 300 | 14 | 70,000 | Foundry | |
| SMIC | B1 Mega Fab (Fab 4, Fab 6) | China, Beijing | 2004 | 300 | 180–90/55 | 52,000 | Foundry | ||
| SMIC | B2A | China, Beijing | 3.59 | 2014 | 300 | 45/40–32/28 | 41,000 | Foundry | |
| SMIC | Fab 15 | China, Shenzhen | 2014 | 200 | 350–90 | 55,000 | Foundry | ||
| SMIC | Fab 7 | China, Tianjin | 2004 | 200 | 350–90 | 60,000 | Foundry | ||
| SMIC | Jingcheng | China, Beijing | 7.7 | Under construction | 300 | 28 | 100,000 | Foundry | |
| SMIC | Lingang | China, Shanghai | 8.87 | Under construction | 300 | 28 | 100,000 | Foundry | |
| SMIC | Shenzhen | China, Shenzhen | 2.35 | Under construction | 300 | 28 | 40,000 | Foundry | |
| SMIC | Xiqing | China, Tianjin | 7.5 | Under construction | 300 | 28 | 100,000 | Foundry | |
| Wuxi Xichanweixin (formerly SMIC – LFoundry) (formerly LFoundry) (formerly Micron) (formerly Texas Instruments) | LF | Italy, Abruzzo, Avezzano | 1995 | 200 | 180–90 | 40,000 | |||
| Nanya | Fab 2 | Taiwan, Linkou | 0.8 | 2000 | 200 | 175 | 30,000 | DRAM | |
| Nanya | Fab 3A | Taiwan, New Taipei City | 1.85 | 2018 | 300 | 70-20 | 34,000 | DRAM | |
| Nanya | Taiwan, New Taipei City | 10.66 | Under construction | 300 | 10 | 15,000–45,000 | DRAM | ||
| MESA+ Institute | NANOLAB | Netherlands, Enschede | Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics | ||||||
| Micron | Fab 4 | United States, Idaho, Boise | 300 | R&D | |||||
| Micron (formerly Dominion Semiconductor) | Fab 6 | United States, Virginia, Manassas | 1997 | 300 | 25 | 70,000 | DRAM, NAND FLASH, NOR | ||
| Micron (formerly TECH Semiconductor) | Fab 7 (formerly TECH Semiconductor, Singapore) | Singapore | 300 | 60,000 | NAND FLASH | ||||
| Micron (formerly IM Flash) | Fab 10 | Singapore | 3 | 2011 | 300 | 25 | 140,000 | NAND FLASH | |
| Micron (formerly Inotera) | Fab 11 | Taiwan, Taoyuan | 300 | 20 and under | 125,000 | DRAM | |||
| Micron | Fab 13 | Singapore | 200 | NOR | |||||
| Micron | Singapore | 200 | NOR Flash | ||||||
| Micron | Micron Semiconductor Asia | Singapore | |||||||
| Micron | China, Xi'an | ||||||||
| Micron (formerly Elpida Memory) | Fab 15 (formerly Elpida Memory, Hiroshima) | Japan, Hiroshima | 300 | 20 and under | 100,000 | DRAM | |||
| Micron (formerly Rexchip) | Fab 16 (formerly Rexchip, Taichung) | Taiwan, Taichung | 300 | 30 and under | 80,000 | DRAM, FEOL | |||
| Micron (formerly Cando) | Micron Memory Taiwan | Taiwan, Taichung | ?, 2018 | 300 | DRAM, BEOL | ||||
| Micron | A3 | Taiwan, Taichung | Under construction | 300 | DRAM | ||||
| Intel | D1B | United States, Oregon, Hillsboro | 1996 | 300 | 22, 14, 10 | Microprocessors | |||
| Intel | D1C | United States, Oregon, Hillsboro | 2001 | 300 | 22, 14, 10 | Microprocessors | |||
| Intel | D1D | United States, Oregon, Hillsboro | 2003 | 300 | 14, 10, 7 | Microprocessors | |||
| Intel | D1X | United States, Oregon, Hillsboro | 2013 | 300 | 14, 10, 7 | Microprocessors | |||
| Intel | Fab 12 | United States, Arizona, Chandler | 1996 | 300 | 65, 22, 14 | Microprocessors & chipsets | |||
| Intel | Fab 32 | United States, Arizona, Chandler | 3 | 2007 | 300 | 45 | |||
| Intel | Fab 32 | United States, Arizona, Chandler | 2007 | 300 | 32, 22 | Microprocessors | |||
| Intel | Fab 42 | United States, Arizona, Chandler | 10 | 2020 | 300 | 10, 7 | Microprocessors | ||
| Intel | Fab 52, 62 | United States, Arizona, Chandler | 20 | 2024 | Microprocessors | ||||
| Intel | Fab 11x | United States, New Mexico, Rio Rancho | 2002 | 300 | 45, 32 | Microprocessors | |||
| Intel (formerly Micron) (formerly Numonyx) (formerly Intel) | Fab 18 | Israel, Southern District, Kiryat Gat | 1996 | 200, 300 | 180, 90, 65, 45 | Microprocessors and chipsets, NOR flash | |||
| Intel | Fab 10 | Ireland, County Kildare, Leixlip | 1994 | 300 | |||||
| Intel | Fab 14 | Ireland, County Kildare, Leixlip | 1998 | 300 | |||||
| Intel | Fab 24 | Ireland, County Kildare, Leixlip | 2004 | 300 | 90, 65, 14 | Microprocessors, Chipsets and Comms | |||
| Intel | Fab 28 | Israel, Southern District, Kiryat Gat | 2008 | 300 | 45, 22, 10 | Microprocessors | |||
| Intel | Fab 38 | Israel, Southern District, Kiryat Gat | Under construction | 300 | Microprocessors | ||||
| Intel | Fab 68 | China, Dalian | 2.5 | 2010 | 300 | 65 | 30,000–52,000 | Microprocessors (former), VNAND | |
| Costa Rican Ministry of Innovation, Science, Technology and Telecommunications | Centro de Exelencia, Distrito Tecnologico T24 | Costa Rica, San Jose, San Jose | 0.5 | Under Construction | 300 | 20 and under | Research on Foundry, AI BEOL & microprocessors | ||
| Tower Semiconductor (formerly Maxim) (formerly Philips) (formerly VLSI) | Fab 9 | United States, Texas, San Antonio | 2003 | 200 | 180 | 28,000 | Foundry, Al BEOL, Power, RF Analog | ||
| Tower Semiconductor (formerly National Semiconductor) | Fab 1 | Israel, Northern District, Migdal HaEmek | 0.235 | 1989, 1986 | 150 | 1000–350 | 14,000 | Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete | |
| Tower Semiconductor | Fab 2 | Israel, Northern District, Migdal HaEmek | 1.226 | 2003 | 200 | 180–130 | 51,000 | Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS | |
| Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) | Fab 3, Newport Beach | United States, California, Newport Beach | 0.165 | 1967, 1995 | 200 | 500-130 | 25,000 | Foundry, Al BEOL, SiGe, EPI | |
| Tower Semiconductor – TPSCo (formerly Panasonic) | Fab 5, Tonami | Japan, Tonami | 1994 | 200 | 500–130 | Foundry, Analog/Mixed-Signal, Power, Discrete, NVM, CCD | |||
| Tower Semiconductor – TPSCo (formerly Panasonic) | Fab 7, Uozu | Japan, Uozu | 1984 | 300 | 65. 45 | Foundry, CMOS, CIS, RF SOI, Analog/Mixed-Signal | |||
| Tower Semiconductor – TPSCo (formerly Panasonic) | Fab 6, Arai | Japan, Arai | 1976 | 200 | 130–110 | Foundry, Analog/Mixed-Signal, CIS, NVM,Thick Cu RDL | |||
| Nuvoton | Fab2 | Taiwan, Hsinchu | 150 | 1000-350 | 45,000 | Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor | |||
| ISRO | SCL | India, Mohali | 2006 | 200 | 180 | MEMS, CMOS, CCD, N.S. | |||
| STAR-C | MEMS | India, Bangalore | 1996 | 150 | 1000–500 | MEMS | |||
| STAR-C | CMOS | India, Bangalore | 1996 | 150 | 1000–500 | CMOS | |||
| GAETEC | GaAs | India, Hyderabad | 1996 | 150 | 700–500 | MESFET | |||
| BAE Systems (formerly Sanders) | United States, New Hampshire, Nashua | 1985 | 100, 150 | 140, 100, 70, 50 | MMIC, GaAs, GaN-on-SiC, foundry | ||||
| Qorvo (formerly RF Micro Devices) | United States, North Carolina, Greensboro | 100,150 | 500 | 8,000 | SAW filters, GaAs HBT, GaAs pHEMT, GaN | ||||
| Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) | United States, Texas, Richardson | 0.5 | 1996 | 100, 150, 200 | 350, 250, 150, 90 | 8,000 | DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC | ||
| Qorvo (formerly TriQuint Semiconductor) | United States, Oregon, Hillsboro | 100, 150 | 500 | Power amps, GaAs | |||||
| Apple (formerly Maxim) (formerly Samsung) | X3 | United States, California, San Jose | ?, 1997, 2015 | 600–90 | |||||
| Analog Devices (formerly Maxim Integrated) | MaxFabNorth | United States, Oregon, Beaverton | (+1, future) | ||||||
| Rohm (formerly Renesas) | Shiga Factory | Japan | 200 | 150 | IGBT, MOSFET, MEMS | ||||
| Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry) | Miyasaki | Japan | 150 | MEMS | |||||
| Rohm (Lapis Semiconductor) | Building No.1 | Japan | 1961 | Transistors | |||||
| Rohm (Lapis Semiconductor) | Building No.2 | Japan | 1962 | Transistors | |||||
| Rohm (Lapis Semiconductor) | Building No.3 | Japan | 1962 | Transistors | |||||
| Rohm (Lapis Semiconductor) | Building No.4 | Japan | 1969 | Transistors | |||||
| Rohm (Lapis Semiconductor) | Chichibu Plant | Japan | 1975 | DRAM | |||||
| Rohm (Lapis Semiconductor) | VLSI Laboratory No. 1 | Japan | 1977 | VLSI | |||||
| Rohm (Lapis Semiconductor) | VLSI Laboratory No. 2 | Japan | 1983 | ||||||
| Rohm (Lapis Semiconductor) | VLSI Laboratory No. 3 | Japan | 1983 | DRAM | |||||
| Rohm (Lapis Semiconductor) | Thailand | 1992 | |||||||
| Rohm (Lapis Semiconductor) | ULSI Laboratory No. 1 | Japan | 1992 | 500 | DRAM | ||||
| Rohm (Kionix) (formerly Renesas Kyoto) | Kyoto | Japan, Kyoto | 200 | MEMS | |||||
| Fuji Electric | Hokuriku | Japan, Toyama prefecture | |||||||
| Fuji Electric | Matsumoto | Japan, Nagano prefecture | 100, 150 | 2000–1000 | 20,000 | CMOS. BiCMOS, bipolar, ASICs, discrete | |||
| Fujitsu | Kawasaki | Japan, Kawasaki | 1966 | ||||||
| Fujitsu | Kumagaya Plant | Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 | 1974 | ||||||
| Fujitsu | Suzaka Plant | Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501 | |||||||
| Dynex Semiconductor | Lincoln, United Kingdom | 1956 | 101.6, 150 | Power Semiconductors | |||||
| Denso (formerly Fujitsu) | Iwate Plant | Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593 | 125, 150, 200 | 1500–350 | 100,000 | CMOS, MOS, bipolar | |||
| Denso | Denso Iwate | Japan, Iwate Prefecture, Kanegasaki-cho | 0.088 | Under construction, 2019, May (planned) | Semiconductor wafers and sensors (since June 2017) | ||||
| Canon Inc. | Oita | Japan | |||||||
| Canon Inc. | Kanagawa | Japan | |||||||
| Canon Inc. | Ayase | Japan | |||||||
| Sharp Corporation | Fukuyama | Japan | 125, 150, 200 | 1000, 800, 600 | 85,000 | CMOS | |||
| Japan Semiconductor
| Iwate | Japan | |||||||
| Japan Semiconductor | Oita | Japan | |||||||
| Japan Advanced Semiconductor Manufacturing, Inc | Kumamoto | Japan | 20+ | 2024 | 300 | 40, 22/28, 12/16 and 6/7 | 100,000+ | ||
| Kioxia | Yokkaichi Operations | Japan, Yokkaichi | 1992 | 173,334 | Flash Memory | ||||
| Kioxia/SanDisk | Y5 Phase 1 (at Yokkaichi Operations) | Japan, 800 Yamanoisshikicho, Yokkaichi, Mie | 2011 | Flash | |||||
| Kioxia/SanDisk | Y5 Phase 2 (at Yokkaichi Operations) | Japan, Mie | 2011 | 300 | 15 | Flash | |||
| Kioxia | Y3 (at Yokkaichi Operations) | Japan, Yokkaichi | 300 | NAND Memory | |||||
| Kioxia | Y4 (at Yokkaichi Operations) | Japan, Yokkaichi | 2007 | 300 | NAND Memory | ||||
| Kioxia | Kaga Toshiba | Japan, Ishikawa | Power semiconductor devices | ||||||
| Kioxia | Oita Operations | Japan, Kyushu | |||||||
| Kioxia | Y6 (phase 1) (at Yokkaichi Operations) | Japan, Yokkaichi | 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2) | 2018 | 300 | BiCS FLASH™ | |||
| Kioxia | Y6 (phase 2) (at Yokkaichi Operations) | Japan, Yokkaichi | 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2) | Planned | 300 | BiCS FLASH™ | |||
| Kioxia | Y7 | Japan, Yokkaichi | 4.6 | Planned | 300 | BiCS FLASH™ | |||
| Kioxia | Y2 (at Yokkaichi Operations) | Japan, Yokkaichi | 1995 | 3D NAND | |||||
| Kioxia | New Y2 (at Yokkaichi Operations) | Japan, Yokkaichi | 2016, July 15 | 300 | 3D NAND | ||||
| Kioxia | K1 | Japan, Iwate Prefecture | Under construction | 300 | 3D NAND | ||||
| MinebeaMitsumi | Rinkai Factory | Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221 | MEMS Foundry | ||||||
| MinebeaMitsumi | Haramachi Factory | Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 | Power semiconductors | ||||||
| Hitachi Energy (Formerly ABB) | Lenzburg | Switzerland, Aargau, Lenzburg | 0.140 | 2010 (second phase) | 130, 150 | 18,750 | High power semiconductors, diodes, IGBT, BiMOS | ||
| Mitsubishi Electric | Power Device Works, Kunamoto Site | Japan | 100, 125, 150, 200 | 2000–400 | 122,000 | Power semiconductors | |||
| Mitsubishi Electric | High frequency optical device manufacturing plant | Japan, Hyogo Prefecture | 100, 125 | 30,000 | High frequency semiconductor devices (GaAsFET, GaN, MMIC) | ||||
| Powerchip Semiconductor | Memory Foundry, Fab P1 | Taiwan, Hsinchu | 2.24 | 2002 | 300 | 90, 70, 22 | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | |
| Powerchip Semiconductor | Fab P2 | Taiwan, Hsinchu, Hsinchu Science Park | 1.86 | 2005 | 300 | 90, 70, 22 | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | |
| Powerchip Semiconductor (formerly Macronix) | Fab P3 | Taiwan, Hsinchu, Hsinchu Science Park | 300 | 90, 70, 22 | 20,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | |||
| SPIL (formerly ProMOS) | ProMOS Fab 4 | Taiwan, Taichung | 1.6 | 300 | 70 | Advanced Packaging | |||
| Macronix (formerly ProMOS) | Fab 5 | Taiwan, Hsinchu | 300 | 50,000 | |||||
| Macronix | Fab 2 | Taiwan | 200 | 48,000 | |||||
| Hon Young Semiconductor (formerly Macronix) | Fab 1 | 150 | 800-400 | 40,000 | Foundry, SiC, Automotive MOSFETs, MEMS | ||||
| Renesas | Naka Factory | Japan | 2009 | 300 | 28 | ||||
| Renesas | Takasaki Factory | Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021 | |||||||
| Renesas | Kawashiri Factory | Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195 | |||||||
| Renesas | Saijo Factory | Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501 | |||||||
| Renesas – Intersil | Palm Bay | United States, Florida, Palm Bay | |||||||
| Bosch (formerly TSI Semiconductors) (formerly Renesas) | Roseville fab, M-Line, TD-Line, K-Line | United States, California, Roseville | 1992, 1985 | 200 | |||||
| TDK – Micronas | FREIBURG | Germany, 19 D-79108, Hans-Bunte-Strasse | |||||||
| TDK (formerly Renesas) | Tsuruoka Higashi | 125 | |||||||
| TDK – Tronics | United States, Texas, Addison | ||||||||
| Silanna (formerly Sapphicon Semiconductor) | Australia, New South Wales, Sydney | 0.030 | 1965,1989 | 150 | |||||
| Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) | Australia, New South Wales, Sydney
| 150 | 500, 250 | RF CMOS, SOS, foundry | |||||
| Murata Manufacturing | Nagano | Japan | 0.100 | Murata en France (ex IPDIA) | SAW filters | ||||
| Murata Manufacturing | Otsuki | Japan | |||||||
| Murata Manufacturing | Kanazawa | Japan | 0.111 | SAW filters | |||||
| Murata Manufacturing (formerly Fujifilm) | Sendai | Japan, Miyagi Prefecture | 0.092 | MEMS | |||||
| Murata Manufacturing | Yamanashi | Japan, Yamanashi Prefecture | |||||||
| Murata Manufacturing | Yasu | Japan, Shiga Prefecture, Yasu | |||||||
| Murata Electronics (Finland) (formerly VTI, since 1979 Vaisalas int. semicon. line) | Vantaa | Finland | 2012, expanded 2019 | 3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc. | |||||
| Mitsumi Electric | Semiconductor Works #3 | Japan, Atsugi Operation Base | 2000 | ||||||
| Mitsumi Electric | Japan, Atsugi Operation Base | 1979 | |||||||
| Sony | Kagoshima Technology Center | Japan, Kagoshima | 1973 | 100, 125, 150 | 2000–500 | 110,000 | Bipolar CCD, MOS, MMIC, SXRD | ||
| Sony | Oita Technology Center | Japan, Oita | 2016 | CMOS Image Sensor | |||||
| Sony | Nagasaki Technology Center | Japan, Nagasaki | 1987 | 150 | 1000-350 | 80,000 | MOS LSI, CMOS Image Sensors, SXRD | ||
| Sony | Kumamoto Technology Center | Japan, Kumamoto | 2001 | CCD Image Sensors, H-LCD, SXRD | |||||
| Sony | Shiroishi Zao Technology Center | Japan, Shiroishi | 1969 | Semiconductor Lasers | |||||
| Sony | Sony Shiroishi Semiconductor Inc. | Japan, Miyagi | Semiconductor Lasers | ||||||
| Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC) | Yamagata Technology Center | Japan, Yamagata | 2014 (Sony) | 100, 125, 150, 200 | 3000, 2000, 800 | MOS, bipolar, CMOS Image Sensor, eDRAM (formerly) | |||
| SK Hynix | China, Chongqing | ||||||||
| SK Hynix | China, Chongqing | ||||||||
| SK Hynix | South Korea, Cheongju, Chungcheongbuk-do | Under construction | NAND Flash | ||||||
| SK Hynix | South Korea, Cheongju | Under construction | NAND Flash | ||||||
| SK Hynix | HC1 | China, Wuxi | 300 | 100,000 | DRAM | ||||
| SK Hynix | HC2 | China, Wuxi | 300 | 70,000 | DRAM | ||||
| SK Hynix | M16 | South Korea, Icheon | 3.13 (13.4 total planned) | 2021 | 300 | 10 (EUV) | 15,000–20,000 (initial) | DRAM | |
| LG Innotek | Paju | South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 | LED Epi-wafer, Chip, Package | ||||||
| ON Semiconductor (formerly GlobalFoundries) (formerly IBM) | United States, New York, East Fishkill | 2.5, +.29 (future) | 2002 | 300 | 90–22, 14 | 12,000–15,000 | Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh | ||
| ON Semiconductor (formerly LSI) | Gresham | United States, Oregon, Gresham | 200 | 110 | |||||
| ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) | United States, Pennsylvania, Mountain Top | 1960–1997 | 200 | 350 | |||||
| ON Semiconductor (formerly TESLA) | Roznov | Czech Republic, Zlín, Rožnov pod Radhoštěm | 1956 | 150, 200 | 1000 | 80,000 | Si, SiC | ||
| ON Semiconductor (formerly Motorola) | ISMF | Malaysia, Seremban | 150 | 350 | 80,000 | Discrete | |||
| ON Semiconductor (formerly Fujitsu) | Aizu Wakamatsu Plant | Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 | 1970 | 150, 200 | 2000-130 | Memory, Logic | |||
| JS Foundry K.K. (formerly ON Semiconductor) (formerly Sanyo) | Niigata | Japan, Niigata | 125, 150 | 2000–600, 350 | 120,000 | CMOS, bipolar, BiCMOS | |||
| LA Semiconductor (formerly ON Semiconductor) (formerly AMI Semiconductor) | Pocatello | United States, Idaho, Pocatello | 1997 | 200 | 350 | ||||
| Diodes Incorporated (formerly ON Semiconductor) (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) | SPFAB | United States, Maine, South Portland | 1960–1997 | 200 | 350 | ||||
| Diodes Incorporated (formerly Zetex Semiconductors) | OFAB | UK, England, Greater Manchester, Oldham | 150 | ||||||
| Diodes Incorporated (formerly BCD Semi) | China | 150 | 4000–1000 | ||||||
| Lite-On Optoelectronics | China, Tianjin | ||||||||
| Lite-On Optoelectronics | Thailand, Bangkok | ||||||||
| Lite-On Optoelectronics | China, Jiangsu | ||||||||
| Lite-On Semiconductor | Keelung Plant | Taiwan, Keelung | 1990 | 100 | Thyristor, DIscrete | ||||
| Lite-On Semiconductor | Hsinchu Plant | Taiwan, Hsinchu | 2005 | Bipolar BCD, CMOS | |||||
| Lite-On Semiconductor | Lite-On Semi (Wuxi) | China, Jiangsu | 2004 | 100 | Discrete | ||||
| Lite-On Semiconductor | Wuxi WMEC Plant | China, Jiangsu | 2005 | Discrete, Power, Optical ICs | |||||
| Lite-On Semiconductor | Shanghai (SSEC) Plant | China, Shanghai | 1993 | 76 | Fab, Assembly | ||||
| Trumpf (formerly Philips Photonics) | Germany, Baden-Württemberg, Ulm | VCSEL | |||||||
| Philips | Netherlands, North Brabant, Eindhoven | 150, 200 | 30,000 | R&D, MEMS | |||||
| Newport Wafer Fab (formerly Infineon Technologies) | FAB11 | UK, Wales, Newport | 200 | 700-180 | 32,000 | Foundry, Compound Semiconductors, IC, MOSFET, IGBT | |||
| Nexperia (formerly NXP Semiconductors) (formerly Philips) | Hamburg site | Germany, Hamburg | 1953 | 200 | 35,000 | Small-signal and bipolar discrete devices | |||
| Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) | Manchester | UK, England, Greater Manchester, Stockport | 1987? | 150, 200 | 24,000 | GaN FETs, TrenchMOS MOSFETs | |||
| NXP Semiconductors (formerly Philips) | ICN8 | Netherlands, Gelderland, Nijmegen | 200 | 40,000+ | SiGe | ||||
| NXP Semiconductors - SSMC | SSMC | Singapore | 1.7 | 2001 | 200 | 120 | 53,000 | SiGe | |
| NXP Semiconductors – Jilin Semiconductor | China, Jilin | 130 | |||||||
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | Oak Hill Fab | United States, Texas, Austin | 0.8 | 1991 | 200 | 250 | |||
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | Chandler Fab | United States, Arizona, Chandler | 1.1 +0.1 (GaN) | 1993 | 150 (GaN), 200 | 180 | GaN-on-SiC pHEMT | ||
| NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | ATMC | United States, Texas, Austin | 1995 | 200 | 90 | ||||
| AWSC | Taiwan, Tainan | 1999 | 150 | 12,000 | Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP | ||||
| Skyworks Solutions (formerly Conexant) (formerly Rockwell) | United States, California, Newbury Park | 100, 150 | Compound Semiconductors (GaAs, AlGaAs, InGaP) | ||||||
| Skyworks Solutions (formerly Alpha Industries) | United States, Massachusetts, Woburn | 100, 150 | RF/cellular components (SiGe, GaAs) | ||||||
| Skyworks Solutions | Japan, Osaka | SAW, TC-SAW Filters | |||||||
| Skyworks Solutions | Japan, Kadoma | SAW, TC-SAW Filters | |||||||
| Skyworks Solutions | Singapore, Bedok South Road | SAW, TC-SAW Filters | |||||||
| Win Semiconductor | Fab A | Taiwan, Taoyuan City | 150 | 2000–10 | Foundry, GaAs | ||||
| Win Semiconductor | Fab B | Taiwan, Taoyuan City | 150 | 2000–10 | Foundry, GaAs, GaN | ||||
| Win Semiconductor | Fab C | Taiwan, Taoyuan | 0.050, 0.178 | 2000, 2009 | 150 | Foundry, GaAs | |||
| ams | FAB B | Austria, Styria, Unterpremstätten | 200 | 350 | Optoelectronics | ||||
| ams Osram (formerly Osram Opto Semiconductors) | Malaysia, Kulim, Kulim Hi-Tech Park | 0.350, 1.18 | 2017, 2020 (second phase, planned) | 150 | LEDs | ||||
| ams Osram (formerly Osram Opto Semiconductors) | Malaysia, Penang | 2009 | 100 | LEDs | |||||
| ams Osram (formerly Osram Opto Semiconductors) | Germany, Bavaria, Regensburg | 2003, 2005 (second phase) | LEDs | ||||||
| Winbond | Memory Product Foundry | Taiwan, Taichung | 300 | 46 | |||||
| Winbond | CTSP Site | Taiwan, No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881 | 300 | ||||||
| Winbond | Planned | 300 | |||||||
| Vanguard International Semiconductor | Fab 1 | Taiwan, Hsinchu | 0.997 | 1994 | 200 | 500, 350, 250 | 55,000 | Foundry, CMOS | |
| Vanguard International Semiconductor (formerly Winbond) | Fab 2 (formerly Fab 4&5) | Taiwan, Hsinchu | 0.965 | 1998 | 200 | 55,000 | Foundry | ||
| Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) | Fab 3E | Singapore | 1.3 | 200 | 180 | 34,000 | Foundry | ||
| TSMC | Fab 2 | Taiwan, Hsinchu | 0.735 | 1990 | 150 | 800, 600, 500 | 88,000 | Foundry, CMOS | |
| TSMC | Fab 3 | Taiwan, Hsinchu | 2 | 1995 | 200 | 500, 350, 250 | 100,000 | Foundry, CMOS | |
| TSMC | Fab 5 | Taiwan, Hsinchu | 1.4 | 1997 | 200 | 350, 250, 180 | 48,000 | Foundry, CMOS | |
| TSMC | Fab 6 | Taiwan, Tainan | 2.1 | 2000, January; 2001 | 200, 300 | 180–? | 99,000 | Foundry | |
| TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments) | Fab 7 | Taiwan | 200 | 350, 250, 220, 180 | 33,000 | Foundry (current) DRAM (former), Logic (former) | |||
| TSMC (formerly WSMC) | Fab 8 | Taiwan, Hsinchu | 1.6 | 1998 | 200 | 250, 180 | 85,000 | Foundry | |
| TSMC (formerly WSMC) | 2000 | 200 | 250, 150 | 30,000 | Foundry | ||||
| TSMC China Company | Fab 10 | China, Shanghai | 1.3 | 2004 | 200 | 74,000 | Foundry | ||
| TSMC | Fab 12 | Taiwan, Hsinchu | 5.2, 21.6 (total, all phases combined) | 2001 | 300 | 150–28 | 77,500–123,800 (all phases combined) | Foundry | |
| TSMC | Fab 12 (P4) | Taiwan, Hsinchu | 6 | 2009 | 300 | 20 | 40,000 | Foundry | |
| TSMC | Fab 12 (P5) | Taiwan, Hsinchu | 3.6 | 2011 | 300 | 20 | 6,800 | Foundry | |
| TSMC | Fab 12 (P6) | Taiwan, Hsinchu | 4.2 | 2013 | 300 | 16 | 25,000 | Foundry | |
| TSMC | Fab 14 | Taiwan, Tainan | 5.1 | 2002, 2004 | 300 | 20 | 82,500 | Foundry | |
| TSMC | Fab 14 (B) | Taiwan, Tainan | 300 | 16 | 50,000+ | Foundry | |||
| TSMC | Fab 14 (P3) | Taiwan, Tainan | 3.1 | 2008 | 300 | 16 | 55,000 | Foundry | |
| TSMC | Fab 14 (P4) | Taiwan, Tainan | 3.750 | 2011 | 300 | 16 | 45,500 | Foundry | |
| TSMC | Fab 14 (P5) | Taiwan, Tainan | 3.650 | 2013 | 300 | 16 | Foundry | ||
| TSMC | Fab 14 (P6) | Taiwan, Tainan | 4.2 | 2014 | 300 | 16 | Foundry | ||
| TSMC | Fab 14 (P7) | Taiwan, Tainan | 4.850 | 2015 | 300 | 16 | Foundry | ||
| TSMC | Fab 15 | Taiwan, Taichung | 9.3 | 2011 | 300 | 20 | 100,000+(166,000 estimate) | Foundry | |
| TSMC | Fab 15 (P1) | Taiwan, Taichung | 3.125 | 2011 | 300 | 4,000 | Foundry | ||
| TSMC | Fab 15 (P2) | Taiwan, Taichung | 3.150 | 2012 | 300 | Foundry | |||
| TSMC | Fab 15 (P3) | Taiwan, Taichung | 3.750 | 2013 | 300 | Foundry | |||
| TSMC | Fab 15 (P4) | Taiwan, Taichung | 3.800 | 2014 | 300 | Foundry | |||
| TSMC | Fab 15 (P5) | Taiwan, Taichung | 9.020 | 2016 | 300 | 35,000 | Foundry | ||
| TSMC | Fab 18 (P1-P3) | Taiwan, Southern Taiwan Science Park | 17.08 | 2020 (P7 under construction) | 300 | 5 | 120,000 | Foundry | |
| TSMC | Fab 18 (P4-P6) | Taiwan, Southern Taiwan Science Park | 2022 (planned), under construction | 300 | 3 | 120,000 | Foundry | ||
| TSMC | Fab 21 (P1) | United States, Arizona, Phoenix | 12 | Q4 2024 | 300 | 5 & 4 | 20,000 | Foundry | |
| TSMC | Fab 21 (P2) | United States, Arizona, Phoenix | 65 (shared for Fab 21 site) | 2028 (planned), under construction | 3 | Foundry | |||
| TSMC | Fab 21 (P3) | United States, Arizona, Phoenix | 65 (shared for Fab 21 site) | 2029-2030 (planned), under construction | 1.6 & 2 | Foundry | |||
| Epistar | Fab F1 | Taiwan, Longtan Science Park | LEDs | ||||||
| Epistar | Fab A1 | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N2 | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N8 | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N1 | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N3 | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N6 | Taiwan, Chunan Science Park | LEDs | ||||||
| Epistar | Fab N9 | Taiwan, Chunan Science Park | LEDs | ||||||
| Epistar | Fab H1 | Taiwan, Central Taiwan Science Park | LEDs | ||||||
| Epistar | Fab S1 | Taiwan, Tainan Science Park | LEDs | ||||||
| Epistar | Fab S3 | Taiwan, Tainan Science Park | LEDs | ||||||
| Epistar (formerly TSMC) | Taiwan, Hsin-Chu Science Park | 0.080 | 2011, second half | LEDs | |||||
| GCS | United States, California, Torrance | 1999 | 100 | 6,400 | Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs | ||||
| Bosch | Germany, Baden-Württemberg, Reutlingen | 1995 | 150 | ASIC, analog, power, SiC | |||||
| Bosch | Germany, Saxony, Dresden | 1.0 | 2021 | 300 | 65 | ||||
| Bosch | WaferFab | Germany, Baden-Württemberg, Reutlingen | 0.708 | 2010 | 200 | 30,000 | ASIC, analog, power, MEMS | ||
| STMicroelectronics | AMK8 (second, newer fab) | Singapore, Ang Mo Kio | 1995 | 200 | |||||
| STMicroelectronics (formerly SGS Microelettronica) | AMJ9 (first fab) | Singapore, Ang Mo Kio | 1984 | 150, 200 | 6" 14 kpcs/day, 8" 1.4 kpcs/day | Power-MOS/ IGBT/ bipolar/ CMOS | |||
| X-Fab | Erfurt | Germany, Thuringia, Erfurt | 1985 | 200 | 1000-600 | 11200– | Foundry, InP | ||
| X-Fab (formerly ZMD) | Dresden | Germany, Saxony, Dresden | 0.095 | 1985 | 200 | 1000-350 | 6000– | Foundry, CMOS, GaN-on-Si | |
| X-Fab (formerly MEMS Foundry Itzehoe) | Itzehoe | Germany, Schleswig-Holstein, Itzehoe | 200 | 13000– | Foundry, MEMS | ||||
| X-Fab (formerly 1st Silicon) | Kuching | Malaysia, Kuching | 1.89 | 2000 | 200 | 350-130 | 30,000– | Foundry | |
| X-Fab (formerly Texas Instruments) | Lubbock | United States, Texas, Lubbock | 0.197 | 1977 | 150, 200 | 1000-600 | 15000– | Foundry, SiC | |
| X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM) | ACL-AMF | France, Île-de-France, Corbeil-Essonnes | 1991, 1964 | 200 | 350-110 | Foundry, CMOS, RF SOI | |||
| IXYS | Germany, Hesse, Lampertheim | IGBT | |||||||
| IXYS | UK, England, Wiltshire, Chippenham | ||||||||
| IXYS | United States, Massachusetts | ||||||||
| IXYS | United States, California | ||||||||
| Samsung | V1-Line | South Korea, Hwaseong | 6 | 2020, February 20 | 300 | 7 | Foundry | ||
| Samsung | S5-Line | South Korea, Pyeongtaek | 300 | Foundry | |||||
| Samsung | S4-Line | South Korea, Hwaseong | 300 | Foundry | |||||
| Samsung | S3-Line | South Korea, Hwaseong | 10.2, 16.2 (planned) | 2017 | 300 | 10 | 200,000 | Foundry | |
| Samsung | S1-Line | South Korea, Giheung | 33 (total) | 2005 (second phase), 1983 (first phase) | 300 | 65–7 | 62,000 | Foundry, CMOS, FDSOI | |
| Samsung | Line-6 | South Korea, Giheung | 100, 150, 200 | 1500–500, 180–65 | Foundry, CMOS, BiCMOS | ||||
| Samsung | S6-Line | United States, Texas, Taylor | 300 | Foundry | |||||
| Samsung | S2-Line | United States, Texas, Austin | 16 | 2011 | 300 | 65–11 | 92,000 | Foundry, CMOS, FDSOI | |
| Samsung | Pyeongtaek | South Korea, Pyeongtaek | 14.7, 27 (total) | 2017, July 6 | 300 | 14 | 450,000 | V-NAND, DRAM | |
| Samsung | Samsung China Semiconductor | China, Shaanxi Province | DDR Memory | ||||||
| Samsung | F1x1 | China, Xian | 2.3 | 2014 (first phase, second phase is under review) | 300 | 20 | 100,000 | VNAND | |
| Samsung | Giheung Campus | South Korea, Gyeonggi-do, Yongin | LEDs | ||||||
| Samsung | Hwasung Campus | South Korea, Gyeonggi-do, Hwaseong | LEDs | ||||||
| Samsung | Tianjin Samsung LED Co., Ltd. | China, Tianjin, Xiqing | LEDs | ||||||
| Seagate | United States, Minnesota, Minneapolis | Read/write heads, | |||||||
| Seagate | UK, Northern Ireland | Read/write heads | |||||||
| Broadcom Inc. (formerly Avago) | United States, Colorado, Fort Collins | ||||||||
| Wolfspeed (formerly Cree Inc.) | Durham | United States, North Carolina, Durham | Compound Semiconductors, LEDs | ||||||
| Wolfspeed (formerly Cree Inc.) | Research Triangle Park | United States, North Carolina | GaN HEMT RF ICs | ||||||
| SMART Modular Technologies | Brazil, São Paulo, Atibaia | 2006 | Packaging | ||||||
| Infineon Technologies | Villach | Austria, Carinthia, Villach | 1970 | 100, 150, 200, 300 | MEMS, SiC, GaN | ||||
| Infineon Technologies | Dresden | Germany, Saxony, Dresden | 3 | 1994–2011 | 200, 300 | 90 | |||
| Infineon Technologies | Kulim | Malaysia, Kulim Hi-Tech Park | 2006 | 200, 300 | 50,000 | Power Semiconductor, GaN, SiC | |||
| Infineon Technologies | Kulim 2 | Malaysia, Kulim Hi-Tech Park | 2015 | 200, 300 | 50,000 | Power Semiconductor, GaN, SiC | |||
| Infineon Technologies | Kulim 3 | Malaysia, Kulim Hi-Tech Park | 8 | 2025 | 200 | Power Semiconductor, GaN, SiC | |||
| Infineon Technologies | Regensburg | Germany, Bavaria, Regensburg | 1959 | ||||||
| Infineon Technologies | Cegled | Hungary, Pest, Cegléd | |||||||
| Infineon Technologies (formerly Cypress Semiconductor) (formerly Spansion) (formerly AMD) | Fab 25 | United States, Texas, Austin | 1.5 | 1995 | 200 | ||||
| D-Wave Systems | Superconducting Foundry | Quantum Processing Units (QPUs) | |||||||
| GlobalFoundries (formerly AMD) | Fab 1 Module 1 | Germany, Saxony, Dresden | 3.6 | 2005 | 300 | 45-22 | 35,000 | Foundry, SOI, FDSOI | |
| GlobalFoundries (formerly AMD) | Fab 1 Module 2 | Germany, Saxony, Dresden | 4.9 | 1999 | 300 | 45-22 | 25,000 | Foundry, SOI | |
| GlobalFoundries | Fab 1 Module 3 | Germany, Saxony, Dresden | 2.3 | 2011 | 300 | 45-22 | 6,000 | Foundry, SOI | |
| GlobalFoundries (formerly Chartered) | Fab 2 | Singapore | 1.3 | 1995 | 200 | 600-350 | 56,000 | Foundry, SOI | |
| GlobalFoundries (formerly Chartered) | Fab 3/5 | Singapore | 0.915, 1.2 | 1997, 1995 | 200 | 350-180 | 54,000 | Foundry, SOI | |
| GlobalFoundries (formerly Chartered) | Fab 6 (merged into Fab 7) | Singapore | 1.4 | 2000 | 200, 300 (merged) | 180-110 | 45,000 | Foundry, SOI | |
| GlobalFoundries (formerly Chartered) | Fab 7 | Singapore | 4.6 | 2005 | 300 | 130, 110, 90, 65, 40 | 50,000 | Foundry, Bulk CMOS, RF SOI | |
| GlobalFoundries | Fab 8 | United States, New York, Malta | 4.6, 2.1, (1, future) 13+ (total) | 2012, 2014 | 300 | 28, 22, 14, 12 | 60,000 (+12,500 future) | Foundry, High-K Metal Gate, SOI FinFET | |
| GlobalFoundries (formerly IBM) | Fab 9 | United States, Vermont, Essex Junction | 1957 | 200 | 350-90 | 50,000 | Foundry, SiGe, RF SOI, GaN | ||
| GlobalFoundries | Technology Development Center | United States, New York, Malta | 1.5 | 2014 | |||||
| SUNY Poly CNSE | NanoFab 300 North | United States, New York, Albany | 0.175, 0.050 | 2004, 2005 | 300 | 65, 45, 32, 22 | |||
| SUNY Poly CNSE | NanoFab 200 | United States, New York, Albany | 0.016 | 1997 | 200 | ||||
| SUNY Poly CNSE | NanoFab Central | United States, New York, Albany | 0.150 | 2009 | 300 | 22 | |||
| Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH) | United States, Texas, Austin | 0.065 | 1989 | 200 | 10,000 | MEMS, photonics, foundry | |||
| Opto Diode | United States, California, Camarillo | LED, Photodiode, PbS/PbSe Infrared Detectors | |||||||
| Optek Technology | 1968 | 100, 150 | GaAs, LEDs | ||||||
| II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR NORTHERN TELECOM EUROPE) (formerly JDS Uniphase) (formerly Uniphase) | Semiconductor Lasers, Photodiodes | ||||||||
| Infinera | United States, California, Sunnyvale | ||||||||
| Rogue Valley Microdevices | United States, Oregon, Medford | 2003 | 50.8–300 | MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D | |||||
| Atomica | Fab 1 | United States, California, Goleta | 2000 | 150, 200 | 350 | 20,000 | Foundry: MEMS, Photonics, Sensors, Biochips | ||
| Sensera | uDev-1 | United States, Massachusetts, Woburn | 2014 | 150 | 700 | 1,000 | MEMS, MicroDevice assembly | ||
| Rigetti Computing | Fab-1 | United States, California, Fremont | 130 | Quantum Processors | |||||
| Polar Semiconductor | FAB 1,2,3 | United States, Minnesota, Bloomington | 200 | BCD, HV, GMR | |||||
| Orbit Semiconductor | 100 | CCD, CMOS | |||||||
| Entrepix | United States, Arizona, Tempe | 2003 | |||||||
| Technologies and Devices International | United States, Florida, Silver Springs | 2002 | |||||||
| Soraa Inc | United States, California | ||||||||
| Soraa Laser Diode | |||||||||
| Mirrorcle Technologies | United States, California, Richmond | ||||||||
| HTE LABS | HTE LABS | United States, California, San Jose | 0.005 | 2009 | 100, 150 | 4000–1000 | 1,000 | Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com | |
| Unitec do Brasil | Brazil, Minas Gerais, Ribeirão das Neves | Planned | |||||||
| Unitec Blue | Argentina, Buenos Aires Province, Chascomús | 0.3 (1.2 planned) | 2013 | RFID, SIM, EMV | |||||
| Everlight | Yuan-Li Plant | Taiwan, Miao-Li | LEDs | ||||||
| Everlight | Pan-Yu Plant | China | LEDs | ||||||
| Everlight | Tu-Cheng Plant | Taiwan, Taipei Country | LEDs | ||||||
| Optotech | Taiwan, Hsinchu | LEDs | |||||||
| Arima Optoelectronics | Taiwan, Hsinchu | 1999 | |||||||
| Episil Semiconductor | Taiwan, Hsinchu | 1992, 1990, 1988 | |||||||
| Episil Semiconductor | Taiwan, Hsinchu | 1992, 1990, 1988 | |||||||
| Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine | NanChang Creative Sensor | China, Jiangxi | 2007 | Image Sensors | |||||
| Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine | Wuxi Creative Sensor | China, Jiangsu | 2002 | ||||||
| Creative Sensor Inc. Archived 2017-07-07 at the Wayback Machine | Wuxi Creative Sensor | Taiwan, Taipei City | 1998 | ||||||
| Visera Technologies | Headquarters Phase I | Taiwan, Hsinchu Science-based Industrial Park | 2007, September | CMOS Image Sensors | |||||
| Panjit | Taiwan, Kaohsiung | 0.1 | 2003 | ||||||
| Nanosystem Fabrication Facility | Hong Kong | ||||||||
| GTA Semiconductor (formerly ASMC) | Fab 2, Fab 3 | China, Shanghai, Xuhui District | 200 | 350, 180, 150 | 55333 | HV Analog, Power | |||
| GTA Semiconductor | Fab 5, Fab 6 | China, Shanghai, Pudong New Area | 5.1 | 2020 | 150, 200, 300 | 115000 | |||
| Shanghai Belling | China, Shanghai | 150 | 1200 | BiCMOS, CMOS | |||||
| SiSemi | China, Shenzhen, Longgang High-tech Industrial Park | 2004 | 130 | Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs | |||||
| SiSemi | 1997 | 100 | Transistors | ||||||
| CRMicro (formerly CSMC) | Fab 1 | 1998 | 150 | 60,000 | HV Analog, MEMS, Power, Analog, Foundry | ||||
| CRMicro (formerly CSMC) | Fab 2 | China, Wuxi | 2008 | 200 | 180, 130 | 40,000 | HV Analog, Foundry | ||
| CRMicro (formerly CSMC) | Fab 3 | 1995 | 200 | 130 | 20,000 | ||||
| CRMicro (formerly CSMC) | Fab 5 | 2005 | 30,000 | ||||||
| Nexchip | N1 | China, Hefei | Q4 2017 | 300 | 150-40 | 40,000 | Display Drivers IC | ||
| Nexchip | N2 | China, Hefei | Under construction | 300 | 40,000 | ||||
| Nexchip | N3 | China, Hefei | Under construction | 300 | 40,000 | ||||
| Nexchip | N4 | China, Hefei | Under construction | 300 | 40,000 | ||||
| Wandai | CQ | China, Chongqing | Under construction | 300 | 20,000 | ||||
| San'an Optoelectronics | Tianjin San'an Optoelectronics Co., Ltd. | China, Tianjin | LEDs | ||||||
| San'an Optoelectronics | Xiamen San'an Optoelectronics Technology Co., Ltd. | China, Xiamen | LEDs | ||||||
| San'an Optoelectronics | Xiamen San'an Optoelectronics Co., Ltd. | China, Xiamen | LEDs | ||||||
| San'an Optoelectronics | Wuhu Anrui Optoelectronics Co., Ltd. | China, Wuhu | LEDs | ||||||
| San'an Optoelectronics | Anrui San'an Optoelectronics Co., Ltd. | China, Wuhu | LEDs | ||||||
| San'an Optoelectronics | Luminus Summary | United States | LEDs | ||||||
| San'an Optoelectronics | Quanzhou San'an Semiconductor Technology Co., Ltd. | China, Nan'an | LEDs | ||||||
| Sanan IC | Xiamen Fab | China, Xiamen | 0.00785 | 2014 | 150 | 30,000 | SAW filters, Foundry, GaA, GaN, RF, Power | ||
| Sanan IC | Quanzhou Fab | China, Quanzhou | 4.6 | 2017 | 150 | 8,000 | SAW filters, Foundry, GaA, RF | ||
| Sanan IC | Changsha Fab | China, Changsha | 2.3 | 2021 | 150 | 30,000 | Foundry, GaN, SiC, Power | ||
| Hua Hong Semiconductor | HH Fab7 | China, Wuxi | 300 | 90-55 | 95,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
| Hua Hong Semiconductor | HH Fab1 | China, Shanghai, Jinqiao | 200 | 95 | 65,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
| Hua Hong Semiconductor | HH Fab2 | China, Shanghai, Zhangjiang | 200 | 180 | 60,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
| Hua Hong Semiconductor | HH Fab3 | China, Shanghai, Zhangjiang | 200 | 90 | 53,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
| Hua Hong Semiconductor (HLMC) | HH Fab5 | China, Shanghai, Zhangjiang | 2011 | 300 | 65/55-40 | 35,000 | Foundry | ||
| Hua Hong Semiconductor (HLMC) | HH Fab6 | China, Shanghai, Kangqiao | 2018 | 300 | 28/22 | 40,000 | Foundry | ||
| HuaLei Optoelectronic | China | LEDs | |||||||
| Sino King Technology | China, Hefei | 2017 | DRAM | ||||||
| APT Electronics | China, Guangzhou | 2006 | |||||||
| Aqualite | China, Guangzhou | 2006 | |||||||
| Aqualite | China, Wuhan | 2008 | |||||||
| Xiamen Jaysun Semiconductor Manufacturing | Fab 101 | China, Xiamen | 0.035 | 2011 | |||||
| Xiyue Electronics Technology | Fab 1 | China, Xian | 0.096 | 2007 | |||||
| Hanking Electronics | Fab 1 | China, Fushun | 2018 | 200 | 10,000 – 30,000 | MEMS Foundry Archived 2021-03-08 at the Wayback Machine, MEMS Design Archived 2021-03-08 at the Wayback Machine MEMS Sensors (Inertial, Pressure, Ultrasound, IoT Motion Sensors | |||
| CanSemi | Phase I | China, Guangzhou | 4 | 2019 | 300 | 180–90 | 20,000 | Power, Analog, Power Discrete | |
| CanSemi | Phase II | China, Guangzhou | 2022 | 300 | 90-55 | 20,000 | |||
| CanSemi | Phase III | China, Guangzhou | 2.4 | Planned | 300 | 55-40 | 40,000 | Automotive, IoT | |
| SensFab | Singapore | 1995 | |||||||
| MIMOS Semiconductor | Malaysia, Kuala Lumpur | 0.006, 0.135 | 1997, 2002 | ||||||
| Silterra Malaysia | Fab1 | Malaysia, Kedah, Kulim | 1.6 | 2000 | 200 | 250, 200, 180–90 | 46,000 | CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal | |
| Pyongyang Semiconductor Factory | 111 Factory | North Korea, Pyongyang | 1980s | 3000 | |||||
| DB HiTek | Fab 1 | South Korea, Bucheon | 1997 | Foundry | |||||
| DB HiTek | Fab 2 | South Korea, Eumsung-Kun | 2001 | Foundry | |||||
| DB HiTek | Fab 2 Module 2 | South Korea, Eumsung-Kun | Foundry | ||||||
| Kodenshi AUK Group | Silicon FAB Line | ||||||||
| Kodenshi AUK Group | Compound FAB Line | ||||||||
| Kyocera | SAW devices | ||||||||
| Seiko Instruments | China, Shanghai | ||||||||
| Seiko Instruments | Japan, Akita | ||||||||
| Seiko Instruments | Japan, Takatsuka | ||||||||
| Epson | T wing | Japan, Sakata | 1997 | 200 | 350-150 | 25,000 | |||
| Epson | S wing | Japan, Sakata | 1991 | 150 | 1200-350 | 20,000 | |||
| Olympus Corporation | Nagano | Japan, Nagano Prefecture | MEMS | ||||||
| Olympus | Japan | MEMS | |||||||
| New Japan Radio | Kawagoe Works | Japan, Saitama Prefecture, Fujimino City | 1959 | 100, 150 | 4000, 400, 350 | Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV, SAW Filters | |||
| New Japan Radio | Saga Electronics Archived 2017-09-19 at the Wayback Machine | Japan, Saga Prefecture | 100, 150 | 4000, 400, 350 | Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV, SAW Filters | ||||
| New Japan Radio | NJR FUKUOKA Archived 2017-09-18 at the Wayback Machine | Japan, Fukuoka Prefecture, Fukuoka City | 2003 | 100, 150 | Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs | ||||
| New Japan Radio | Japan, Nagano, Nagano City | ||||||||
| New Japan Radio | Japan, Nagano, Ueda City | ||||||||
| Nichia | YOKOHAMA TECHNOLOGY CENTER | Japan, Kanagawa | LEDs | ||||||
| Nichia | SUWA TECHNOLOGY CENTER | Japan, Nagano | LEDs | ||||||
| Taiyo Yuden | Japan, Nagano | SAW devices | |||||||
| Taiyo Yuden | Japan, Ome | SAW devices | |||||||
| Silex Microsystems | Sweden, Stockholm County, Järfälla | 0.009, 0.032 | 2003, 2009 | ||||||
| Elmos Semiconductor | Germany, North Rhine-Westphalia, Dortmund | 1984 | 200 | 800, 350 | 9000 | HV-CMOS | |||
| United Monolithic Semiconductors | Germany, Baden-Württemberg, Ulm | 100 | 700, 250, 150, 100 | Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode | |||||
| United Monolithic Semiconductors | France, Île-de-France, Villebon-sur-Yvette | 100 | Foundry, BEOL | ||||||
| Innovative Ion Implant | France, Provence-Alpes-Côte d'Azur, Peynier | 51–300 | |||||||
| Innovative Ion Implant | UK, Scotland, Bathgate | 51–300 | |||||||
| nanoPHAB | Netherlands, North Brabant, Eindhoven | 50–100 | 50-10 | 2–10 | MEMS | ||||
| Micron Semiconductor Ltd. | Lancing | UK, England, West Sussex, Lancing | Detectors | ||||||
| Pragmatic Semiconductor | FlexLogic 001 | UK, England, Durham | 0.020 | 2018 | 200 | 600 | 4,000 | Flexible Semiconductor / Foundry and IDM | |
| Pragmatic Semiconductor | FlexLogic 002 | UK, England, Durham | 0.050 | 2023 | 300 | 600 | 15,000 | Flexible Semiconductor / Foundry and IDM | |
| Pragmatic Semiconductor | FlexLogic 003 | UK, England, Durham | 0.050 | Planned 2025 on line | 300 | 600 | 15,000 | Flexible Semiconductor / Foundry and IDM | |
| INEX Microtechnology | UK, England, Northumberland, Newcastle upon Tyne | 2014 | 150 | Foundry | |||||
| CSTG | UK, Scotland, Glasgow | 2003 | 76, 100 | InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry | |||||
| Photonix | UK, Scotland, Glasgow | 0.011 | 2000 | ||||||
| Integral | Belarus, Minsk | 1963 | 100, 150, 200 | 2000, 1500, 350 | |||||
| VSP Mikron | WaferFab | Russia, Voronezh Oblast, Voronezh | 1959 | 100, 150 | 900+ | 6,000 | Bipolar, Power Semiconductors | ||
| Semikron | Nbg Fab | Germany, Nuremberg | 1984 | 150 | 3500 | 70,000 | Bipolar, Power Semiconductors | ||
| NM-Tech | Russia, Moscow, Zelenograd | 2016 | 200 | 250-110 | 20,000 | ||||
| Angstrem | Liniya 100 | Russia, Moscow, Zelenograd | 1963 | 100 | 1200 | 500 (6,000 per year) | |||
| Angstrem | Liniya 150 | Russia, Moscow, Zelenograd | 1963 | 150 | 600 | 6,000 (72,000 per year) | |||
| Mikron Group | Mikron | Russia, Moscow, Zelenograd | 0.4 | 2012 | 200 150 100 | 250-65 2000-1600 | 3,000 8,000 5,000 | ||
| Crocus Nano Electronics | Russia, Moscow | 0.2 | 2016 | 300 | 90-55 | 4,000 | BEOL | ||
| NIIIS | Russia, Nizhny Novgorod Oblast, Nizhny Novgorod | 2010 | 100–150 | 350-150 | MEMS | ||||
| NPP Istok | Russia, Moscow Oblast, Fryazino | 150 | |||||||
| Micran | Russia, Tomsk Oblast, Tomsk | 2015 | 100 | ||||||
| Kremny El | Russia, Bryansk Oblast, Bryansk | 2019 | 500 | ||||||
| Syntez Microelectronics | Russia, Voronezh Oblast, Voronezh | 1992 | 200 | 350-65 | SiC, GaN, TSV | ||||
| NZPP Vostok | Russia, Novosibirsk Oblast, Novosibirsk | 1956 | 100 | 250-180 | |||||
| Russian Space Systems | Russia, Moscow | 76, 100, 150 | 1000 | ||||||
| Ruselectronics | Svetlana-Rost | Russia, Saint Petersburg | 50, 76, 100 | 1000, 800, 500, 200 | |||||
| OKB-Planeta | Svetlana-Rost | Russia, Novgorod Oblast, Veliky Novgorod | 100 | 150 | |||||
| FBK – Fondazione Bruno Kessler | MNF | Italy, Trento | 1990 | 500 | 150 | Research Institute; prototype productions of silicon MEMS, silicon radiation sensors | |||
| CEITEC – Centro Nacional de Tecnologia Electrônica Avançada S.A | Brazil, Porto Alegre | 2008 | 600 | Research Institute; prototype production | |||||
| HT Micron (Hana Micron) | São Leopoldo | Brazil, São Leopoldo | 0.2 | 2009 | DRAM, MCP, NAND Flash | ||||
| Honeywell Aerospace Technologies | USA, Redmond, Washington | MEMS | |||||||
| Microchip (formerly Fujitsu Microelectronics) | Fab 4 | United States, Oregon, Gresham | 0.1835 | 200 | 110 | 30,000 | |||
| Microchip (formerly Atmel) | Fab 5 | United States, Colorado, Colorado Springs | 150 | 250 | 40,000 | Domestic rad-hard MOSFET, silicon carbide, cryptography, hi-rel discretes, MEMS, automotive, analog, microcontrollers, and memory | |||
| Microchip (part of Microsemi acquisition, formerly New England Semiconductor) | Lawrence | United States, Massachusetts, Lawrence | 76.2 and 100 | 1,000 | 2,000 |
Number of open fabs currently listed here: 474
(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)
Closed plants
| Company | Plant Name | Plant Location | Plant Cost (in US$ Billions) | Started Production | Wafer Size (mm) | Process Technology Node (nm) | Production Capacity (Wafers/Month) | Technology / Products | Ended Production |
|---|---|---|---|---|---|---|---|---|---|
| BelGaN Group (formerly ON Semiconductor) (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec) | Oudenaarde | Belgium, East Flanders, Oudenaarde | 150, 200 | 3000, 2000–350 | GaN, mixed-signal CMOS, BCD foundry | 2024 | |||
| VEF | Soviet Union, Latvia, Riga | 1960 | Semi-secret government semiconductor fab and a major research center separated from the Russian military manufacturing complex by the collapse of the USSR. | 1999 | |||||
| Tower Semiconductor (formerly Micron) | Fab 4 | Japan, Hyōgo, Nishiwaki | 0.450 | 1992 | 200 | 95 | 60,000 | DRAM, foundry | 2014 |
| Tower Semiconductor – Tacoma | China, Jiangsu, Nanjing | halted, bankruptcy in June 2020 | 200, 300 (planned) | Foundry | 2020 | ||||
| Fujian Jinhua (JHICC) | F2 | China, Fujian, Jinjiang | 5.65 | 2018 (planned) | 300 | 22 | 60,000 | DRAM | 2018 |
| Decoma | F2 | China, Jiangsu, Huai'an | Under construction | 300 | 20,000 | 2020 | |||
| Wuhan Hongxin Semiconductor Manufacturing (HSMC) | China, Hubei, Wuhan | 2019 (halted) | 300 | 14, 7 | 30,000 | Foundry | 2020 | ||
| Tsinghua Unigroup – Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.) | SZ | China, Guangdong, Shenzhen | 12.5 | Planned | 300 | 50,000 | DRAM | 2019 (just plan) | |
| TSMC | Fab 1 | Taiwan Hsinchu, Baoshan | 1987 | 150 | 2000-800 | 20,000 | Foundry, CMOS, BiCMOS | 2001, March 9 | |
| UMC | Fab 1 | Japan, Chiba, Tateyama | 0.543 | 1997 | 200 | 40,000 | Foundry | 2012 | |
| SK Hynix | E-4 | United States, Oregon, Eugene | 1.3 | 2007 | 200 | 30,000 | DRAM | 2008 | |
| Symetrix – Panasonic | Brazil | 0.9 (planned) | planned | FeRAM | (just plan) | ||||
| Rohm (formerly Data General) | United States, California, Sunnyvale | ||||||||
| Kioxia | Fab 1 (at Yokkaichi Operations) | Japan, Mie, Yokkaichi | 1992 | 200 | 400 | 35,000 | SRAM, DRAM | 2001, September | |
| NEC | Livingston | United Kingdom, Scotland, West Lothian, Livingston | 4.5 (total) | 1981 | 150, 200 | 800–350, 250, 180 | 30,000 | CMOS, DRAM, SRAM, MCUs, ASICs, DSPs | 2001, April |
| LFoundry (formerly Renesas Electronics) | Germany, Bavaria, Landshut | 1992 | 200 | 2011 | |||||
| LFoundry (formerly Atmel) | France, Bouches-du-Rhône, Rousset | ? | 200 | 25.000 | |||||
| Atmel (formerly Siemens) | Fab 9 | United Kingdom, Tyne and Wear, North Tyneside | 1.53 | 1998 | DRAM | 2007 | |||
| EI Niš | Ei Poluprovodnici | Serbia, Nišava, Niš | 1962 | 100 | 2000 | ||||
| Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) | UK, Devon, Plymouth | 100, 150 | 800, 500 | 8,000 | Bipolar, ASICs, linear ICs | ||||
| Telefunken Semiconductors | Heilbronn, HNO-Line | Germany, Baden-Württemberg, Heilbronn | 0.125 | 1993 | 100, 150 | 800 | 10,000 | Bipolar, CMOS, BiCMOS, GaAs, SiGe, ASICs, ASSPs, MCUs, discrete, optoelectronics | 2015 |
| Qimonda | Richmond | United States, Virginia, Richmond | 3 | 2005 | 300 | 65 | 38,000 | DRAM | 2009, January |
| STMicroelectronics (formerly Nortel) | United States, California, San Diego, Rancho Bernardo | 100, 150 | 800, 500 | NMOS, CMOS, BiCMOS | 2002 | ||||
| Freescale Semiconductor (formerly Motorola) | Toulouse Fab | France, Haute-Garonne, Toulouse | 1969 | 150 | 650 | Automotive | 2012 | ||
| Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) | Sendai Fab | Japan, Miyagi, Sendai | 1987 | 150, 200 | 500 | DRAM, microcontrollers, analog, sensors | 2009? | ||
| Agere Systems (formerly Lucent) (formerly AT&T) | Spain, Madrid, Tres Cantos | 0.67 | 1987 | 500, 350, 300 | CMOS | 2001 | |||
| GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) | United States, Pennsylvania, Audubon | 1969 1976 1995 | 1000 | 1976 1992 2001 | |||||
| Integrated Device Technology | United States, California, Salinas | 1985 | 150 | 800-350 | 2002 | ||||
| ON Semiconductor (formerly Cherry Semiconductor) | United States, Rhode Island, East Greenwich | 100, 150 | 1400 | 10,000 | Bipolar, BiCMOS, Linear ICs and ASICs | 2004 | |||
| ON Semiconductor (formerly Motorola) | United States, Arizona, Phoenix | 150 | 5000-500 | 12,000 | MOS, power discrete | 2011 | |||
| ON Semiconductor (formerly Motorola) | Aizu Plant | Japan, Aizu | 100, 150 | 1200, 1000 | 40,000 | CMOS, MCUs, logic and smart power ICs | 2012 | ||
| ON Semiconductor (formerly Truesense Imaging, Kodak) | Rochester | United States, New York, Rochester | 150 | CCDs and Image Sensors | 2020 | ||||
| Intel | Fab 8 | Israel, Jerusalem District, Jerusalem | 1985 | 150 | Microprocessors, Chipsets, Microcontrollers | 2007 | |||
| Intel | Fab D2 | United States, California, Santa Clara | 1989 | 200 | 130 | 8,000 | Microprocessors, Chipsets, Flash memory | 2009 | |
| Intel | Fab 17 | United States, Massachusetts, Hudson | 1998 | 200 | 130 | Chipsets and other | 2014 | ||
| Fairchild Semiconductor (formerly National Semiconductor) | West Jordan | United States, Utah, West Jordan | 1977 | 150 | 2015 | ||||
| Texas Instruments | HFAB | United States, Texas, Houston | 1967 | 150 | 2013 | ||||
| Texas Instruments (formerly Silicon Systems) | Santa Cruz | United States, California, Santa Cruz | 0.250 | 1980 | 150 | 800 | 80,000 | HDD | 2001 |
| Texas Instruments (formerly National Semiconductor) | Arlington | United States, Texas, Arlington | 1985 | 150 | 80000, 35000 | 2010 | |||
| Unknown (fortune 500 company) | United States, East Coast | 150 | 1,600 | MEMS | 2016 | ||||
| Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) | KFAB | United States, Missouri, Lee's Summit | 1994 | 130 | 2017 | ||||
| Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) | United States, Florida, Apopka | SAW filters | 2019 | ||||||
| GlobalFoundries | Abu Dhabi | UAE, Emirate of Abu Dhabi, Abu Dhabi | 6.8 (planned) | 2016 (planned) | 300 | 180-110 | 45,000 | Foundry | 2011 (plan stopped) |
| GlobalFoundries – Chengdu | China, Sichuan, Chengdu | 10 (planned) | 2018 (planned), 2019 (second phase) | 300 | 180/130 (cancelled), 22 (second phase) | 20,000 (85,000 planned) | Foundry, FDSOI (second phase) | 2020 (was idle) | |
| Tondi Elektroonika | A-1381 | Soviet Union, Estonia, Harju, Tallinn | 1958 | Radio equipment, Transisors, Photodiode | 1978 | ||||
| Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA) | United States, Ohio, Findlay | 1954 | 100, 125 | 2000, 1500, 1200 | 60,000 | CMOS, bipolar, BiCMOS, Semiconductors, Optoelectronics, Integrated Circuits, Research | 2003 | ||
| Microchip (formerly General Instrument) | Fab 1 | United States, Arizona, Chandler | 125 | 5,000 | |||||
| Microchip (formerly Digital Equipment Corporation, formerly GTE Corporation) | Fab 2 | United States, Arizona, Tempe | 200 | 250 | 20,000 | ||||
| Microchip (formerly Matsushita Semiconductor Corporation of America) | Fab 3 | United States, Washington, Puyallup | field-programmable microcontrollers, serial EEPROMs, and microperipheral products |
Number of closed fabs currently listed here: 49
See also
- List of Intel manufacturing sites
- List of integrated circuit manufacturers
- Semiconductor device fabrication
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